"With our 4th generation V-NAND technology, we can provide differentiated values in high-capacity, high-performance, and compact product dimensions, which together will contribute to our customers achieving better TCO results," said Young-Hyun Jun, president of memory business, Samsung. "We will continue to introduce more advanced V-NAND solutions and expand our flash business initiatives in maximizing an unbeatable combination of performance and value."
The key to this is Samsung’s 4th generation, 64-layer, triple-level-cell V-NAND flash memory that increases its single die density to 512Gb and IO speed to 800MB/s. Samsung has led in V-NAND, introducing 24 layers in August 2013 and now 64-layers.
Following are some announcements made at the summit.
World's largest capacity drive, 32TB SAS SSD, for enterprise storage systems
Samsung's latest SAS SSD is the world's largest single 2.5” drive based on 512Gb V-NAND chips. A total of 512 V-NAND chips are stacked in 16 layers to form a 1TB package, and the 32TB SSD contains 32 of those packages.
The 32TB SAS SSD can reduce system space requirements up to 40 times compared with the same type of system using two racks of HDDs. It will be produced in 2017. Samsung also expects that SSDs with more than 100TB of storage capacity will be available by 2020.
1TB memory in single BGA package
The Samsung 1TB BGA SSD features a compact, ball grid array (BGA) package design that contains all essential SSD components, including triple-level-cell V-NAND flash chips, LPDDR4 mobile DRAM, and a Samsung controller.
It will deliver performance, reading sequentially at 1500MB/s and writing sequentially at 900MB/s. By reducing its size up to 50% compared to its predecessor, the SSD weighs about one gram (less than half the weight of a US dime), making it suitable for compact next generation notebooks, tablets, and convertibles.
Next year, Samsung plans to launch its 1TB BGA SSD by adopting a high-density packaging technology called FO-PLP (fan-out panel level packaging) which Samsung developed with Samsung Electro-Mechanics.
New Z-SSD breaks through performance limits of current NAND flash memory storage
Samsung has also developed a high-performance, low latency SSD solution, the Z-SSD. It shares the fundamental structure of V-NAND and has a circuit design and controller that can maximise performance, with four times faster latency and 1.6 times better sequential reading than the Samsung PM963 NVMe SSD.
It will be used in systems that deal with intensive real-time analysis as well as extending high performance to all types of workloads. It is expected to be released next year.